Part Number Hot Search : 
DTC144 MTC14 130006 SPT7922 GS9065A MBRB1535 BNR14R21 CF605K9
Product Description
Full Text Search
 

To Download TLHE4900 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 VISHAY
TLHE4900
Vishay Semiconductors
High Intensity LED in 3 mm Clear Package
Description
This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm clear plastic package. The small viewing angle of these devices provides a high brightness. All packing units are categorized in luminous intensity and color groups. That allows users to assemble LEDs with uniform appearance.
19222
Features
* * * * * * * * AlInGaP technology Standard 3 mm (T-1) package Small mechanical tolerances Suitable for DC and high peak current Very small viewing angle Very high intensity Luminous intensity color categorized Lead-free device
e2 Pb
Pb-free
Applications
Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light
Parts Table
Part TLHE4900 Color, Luminous Intensity Yellow, IV > 66 mcd Angle of Half Intensity () 16 Technology AllnGaP on GaAs
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified TLHE4900 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 s, 2 mm from body Tamb 60 C tp 10 s Tamb 60 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 80 100 - 40 to + 100 - 55 to + 100 260 400 Unit V mA A mW C C C C K/W
Document Number 83023 Rev. 1.5, 30-Aug-04
www.vishay.com 1
TLHE4900
Vishay Semiconductors Optical and Electrical Characteristics
Tamb = 25 C, unless otherwise specified
VISHAY
Yellow
TLHE4900 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1) 1)
Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 66 581
Typ. 300 588 590 16 1.9
Max 594
Unit mcd nm nm deg
Dominant wavelength
2.6
V V pF
5 15
in one Packing Unit IVmin/IVmax 0.5
Typical Characteristics (Tamb = 25 C unless otherwise specified)
0
I v rel - Relative Luminous Intensity
10
20
125
PV - Power Dissipation ( mW )
30
100 75 50 25 0
1.0 0.9 0.8 0.7 0.6
40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4
0
20
40
60
80
100
95 10044
95 10887
Tamb - Ambient Temperature ( C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
60
IF - Forward Current ( mA ) I F - Forward Current ( mA )
100
50 40 30 20 10 0 0 20 40 60 80 100
10
1 1.0
95 10878
1.5
2.0
2.5
3.0
95 10894
Tamb - Ambient Temperature ( C )
V F - Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 4. Forward Current vs. Forward Voltage
www.vishay.com 2
Document Number 83023 Rev. 1.5, 30-Aug-04
VISHAY
TLHE4900
Vishay Semiconductors
1.6
I V rel - Relative Luminous Intensity
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
I V rel - Relative Luminous Intensity
IF = 20 mA
1.2 I F = 20 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 - Wavelength ( nm )
95 10880
95 10881
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
Figure 8. Relative Intensity vs. Wavelength
IV rel - Relative Luminous Intensity
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1 1 2 0.5 5 0.2 10 20 50 0.02 I F (mA) t p /T
96 11589
0.1 0.05
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
I Vrel - Relative Luminous Intensity
10
1.0
0.1
0.01 1
96 11588
10 I F - Forward Current ( mA )
100
Figure 7. Relative Luminous Intensity vs. Forward Current
Document Number 83023 Rev. 1.5, 30-Aug-04
www.vishay.com 3
TLHE4900
Vishay Semiconductors Package Dimensions in mm
VISHAY
95 10914
www.vishay.com 4
Document Number 83023 Rev. 1.5, 30-Aug-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
TLHE4900
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83023 Rev. 1.5, 30-Aug-04
www.vishay.com 5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
www.vishay.com 1


▲Up To Search▲   

 
Price & Availability of TLHE4900

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X